Transistor

"GaN Systems Cup" 2020 Winners Announced at China Power Supply Society Awards Ceremony

Retrieved on: 
Wednesday, January 6, 2021
Chemistry, Physical sciences, Natural sciences, Nitrides, Gallium nitride, Gan, Gallium, Transistor

Ottawa, Ontario--(Newsfile Corp. - January 6, 2021) - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the winners of the sixth annual "GaN Systems Cup" China Power Supply Society (CPSS) design competition at an awards ceremony at the CPSS Conference on December 21, 2020.

Key Points: 
  • Ottawa, Ontario--(Newsfile Corp. - January 6, 2021) - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the winners of the sixth annual "GaN Systems Cup" China Power Supply Society (CPSS) design competition at an awards ceremony at the CPSS Conference on December 21, 2020.
  • The competition challenges top engineering teams from China's leading universities to design new or improved power electronics systems using GaN power transistors.
  • Winners of the sixth annual "GaN Systems Cup" China Power Supply Society (CPSS) design competition were announced at an awards ceremony at the CPSS Conference on December 21, 2020.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.

Philips New Multi-Port 65W Fast Charger Reaches New Levels with GaN Systems Transistors

Retrieved on: 
Thursday, December 17, 2020
Chemistry, Physical sciences, Natural sciences, Nitrides, Gallium nitride, Transistor, Gan, Gallium, Transphorm

GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today that the Philips SPS2316G/93, a 2C1A 65W GaN charger, features GaN Systems power transistors.

Key Points: 
  • GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today that the Philips SPS2316G/93, a 2C1A 65W GaN charger, features GaN Systems power transistors.
  • Philips 65W GaN charger features GaN Systems power transistors.
  • To achieve high performance and power density, the Philips charger uses GaN Systems' 650V E-mode GaN power transistor (GS-065-011-1-L).
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.

Efficient Power Conversion (EPC) Launches 40 V eGaN® FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Retrieved on: 
Thursday, December 17, 2020
Technology, Engineering, Automotive Manufacturing, Other Energy, Manufacturing, Alternative Vehicles, Fuels, Automotive, Alternative energy, Energy, Other Technology, Hardware, Other Manufacturing, Electronic design automation, Performance & Special Interest, Electronics industry, Chemistry, Physical sciences, Semiconductor devices, Field-effect transistors, MOSFETs, Alex Lidow, Inorganic compounds, Transistor, Gallium nitride, Depletion and enhancement modes, Gallium

Efficient Power Conversion Corporation , the worlds leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 m, 40 V) eGaN FET.

Key Points: 
  • Efficient Power Conversion Corporation , the worlds leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 m, 40 V) eGaN FET.
  • This device is ideal for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters.
  • According to Alex Lidow, EPCs co-founder and CEO, The EPC2055 is a very good example of the rapid evolution of GaN FET technology.
  • eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
    View source version on businesswire.com: https://www.businesswire.com/news/home/20201217005215/en/

GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%

Retrieved on: 
Wednesday, December 16, 2020
Electronics industry, Electrical engineering, Information and communications technology, Gallium nitride, Nitrides, Field-effect transistors, High-electron-mobility transistor, Transistor, Consumer electronics, Electric power system, Automotive electronics

GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.

Key Points: 
  • GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.
  • GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of todays most demanding industries including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics.
  • As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems.
  • By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world.

VisIC unveils new 8mOhm power switch for EV Inverters

Retrieved on: 
Wednesday, December 16, 2020
Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Gallium nitride, Nitrides, Power inverter, Gallium, Transistor, Inverter

The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.

Key Points: 
  • The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.
  • "The V8 product doubles the current capabilities and reduces resistance by a factor of 2.5 times over the previous generation of VisIC product.
  • This will allow our customers to improve their inverter systems to be more efficient in size, power, and cost for the target EV market."
  • VisIC offers high power transistor products based upon compound semiconductor Gallium Nitride (GaN) material aiming to provide products for cost-effective and high-performance automotive inverter systems.

VisIC unveils new 8mOhm power switch for EV Inverters

Retrieved on: 
Wednesday, December 16, 2020
Chemistry, Physical sciences, Natural sciences, Inorganic compounds, Gallium nitride, Nitrides, Power inverter, Gallium, Transistor, Inverter

The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.

Key Points: 
  • The new 8mOhm product is another step in the ongoing effort to support our customers and improve the power conversion systems.
  • "The V8 product doubles the current capabilities and reduces resistance by a factor of 2.5 times over the previous generation of VisIC product.
  • This will allow our customers to improve their inverter systems to be more efficient in size, power, and cost for the target EV market."
  • VisIC offers high power transistor products based upon compound semiconductor Gallium Nitride (GaN) material aiming to provide products for cost-effective and high-performance automotive inverter systems.

Global Vector Signal Generator Market Value to Increase to Almost 9% During 2020-2024 | Includes Post Pandemic Analysis and Forecasts for New Normal | Technavio

Retrieved on: 
Wednesday, December 9, 2020
Technology, Mobile, Wireless, Networks, Telecommunications, Science and technology, Semiconductor devices, Industries, Technology, Consumer electronics, Electronics industry, Transistor, Motorola, Electronics

The market growth in the segment will be significant over the forecast period.

Key Points: 
  • The market growth in the segment will be significant over the forecast period.
  • By geography, North America is going to have a lucrative growth during the forecast period.
  • The growth of the market in North America is due to the increased adoption of technologically advanced devices across end-user sectors in the region.
  • Related Reports on Information Technology Include:
    Global Small Signal Transistor Market - Global small signal transistor market is segmented by application (industrial, automotive, communication, consumer electronics, and others) and geography (APAC, Europe, North America, MEA, and South America).

Atomera to Participate in 11th Annual Craig-Hallum Alpha Select Conference

Retrieved on: 
Monday, November 9, 2020
Science and technology in the United States, Atomera, Physical sciences, Chemistry, Semiconductor devices, Semiconductor, Intel, Silicon, Transistor

LOS GATOS, Calif., Nov. 09, 2020 (GLOBE NEWSWIRE) -- Atomera Incorporated (NASDAQ: ATOM ), a semiconductor materials and intellectual property licensing company focused on deploying its proprietary technology into the semiconductor industry, today announced it will participate in the 11th Annual Craig-Hallum Alpha Select Conference to be held virtually on Tuesday, Nov 17, 2020.

Key Points: 
  • LOS GATOS, Calif., Nov. 09, 2020 (GLOBE NEWSWIRE) -- Atomera Incorporated (NASDAQ: ATOM ), a semiconductor materials and intellectual property licensing company focused on deploying its proprietary technology into the semiconductor industry, today announced it will participate in the 11th Annual Craig-Hallum Alpha Select Conference to be held virtually on Tuesday, Nov 17, 2020.
  • Atomera management will host one-on-one meetings with investors who are registered to attend the conference.
  • For more information about the conference or to schedule a virtual one-on-one meeting with management, please contact your Craig-Hallum representative.
  • Atomera has developed Mears Silicon Technology (MST), which increases performance and power efficiency in semiconductor transistors.

Ideal Power to Host Third Quarter 2020 Results Conference Call on Thursday, November 12, 2020 at 4:30 P.M. Eastern Time

Retrieved on: 
Thursday, October 29, 2020
Electronics industry, Electrical engineering, Semiconductor devices, Electrical components, Semiconductor, Transistor, Power semiconductor device, Power electronics

Ideal Power (NASDAQ: IPWR) is pioneering the development of its broadly patented bi-directional power switches, creating highly efficient and ecofriendly energy control solutions for industrial, alternative energy, military and automotive applications.

Key Points: 
  • Ideal Power (NASDAQ: IPWR) is pioneering the development of its broadly patented bi-directional power switches, creating highly efficient and ecofriendly energy control solutions for industrial, alternative energy, military and automotive applications.
  • The Company is focused on its patented Bi-directional, Bi-polar Junction Transistor (B-TRAN) semiconductor technology.
  • B-TRAN is a unique double-sided bi-directional AC switch able to deliver substantial performance improvements over today's conventional power semiconductors.
  • Ideal Power believes B-TRAN modules will reduce conduction and switching losses, complexity of thermal management and operating cost in medium voltage AC power switching and control circuitry.

Microchip Releases Newest Generation of AEC-Q101 Qualified 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diode (SBD) for Automotive Applications

Retrieved on: 
Wednesday, October 28, 2020
Electronics industry, Semiconductor devices, Chemistry, Materials, Digital electronics, Biosensors, Electronic design, Sensors, Microchip Technology, Silicon carbide, Integrated circuit, Transistor

The devices superior avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity.

Key Points: 
  • The devices superior avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity.
  • Through Microchip internal and third-party testing, critical reliability metrics have proven Microchip devices superior performance when compared to other SiC manufactured devices.
  • Microchip also provides a broad portfolio of 700, 1200 and 1700V SiC SBD and Metal Oxide Silicon Field Effect Transistor (MOSFET) power modules utilizing its newest generation of SiC die.
  • Microchips AEC-Q101 qualified 700 and 1200V SiC SBD devices (also available as die for power modules) for automotive applications are available now for volume production orders.