Power MOSFET

ROHM’s New 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance

Retrieved on: 
Wednesday, June 17, 2020
Semiconductor devices, Electrical components, Semiconductors, Power electronics, MOSFETs, Silicon, Power semiconductor device, Silicon carbide, Field-effect transistor, Power MOSFET

To solve these various challenges, designers urgently need SiC power devices capable of providing high withstand voltage with low losses.

Key Points: 
  • To solve these various challenges, designers urgently need SiC power devices capable of providing high withstand voltage with low losses.
  • ROHM, a pioneer in SiC, began mass producing SiC MOSFETs ahead of the industry in 2010.
  • For power semiconductors there is often a trade-off relationship between lower ON resistance and short-circuit withstand time, which is required to strike a balance for achieving lower power losses in SiC MOSFETs.
  • In addition, significantly reducing the parasitic capacitance (which is a problem during switching) makes it possible to achieve 50% lower switching loss over ourprevious generation of SiC MOSFETs.

Analysis on Impact of COVID-19-Global Low-voltage MOSFET Market 2019-2023 | Increased Investments in Data Centers to Boost Growth | Technavio

Retrieved on: 
Wednesday, April 8, 2020
Technology, Semiconductor, Semiconductor devices, Transistors, Electrical components, MOSFETs, Silicon, Power electronics, Field-effect transistor, Power MOSFET, Power semiconductor device

Our low-voltage MOSFET market report covers the following areas:

Key Points: 
  • Our low-voltage MOSFET market report covers the following areas:
    This study identifies growing investment in smart city projects as one of the prime reasons driving the low-voltage MOSFET market growth during the next few years.
  • We provide a detailed analysis of around 25 vendors operating in the low-voltage MOSFET market, including some of the vendors such as Infineon Technologies, ON Semiconductor, Renesas Electronics, STMicroelectronics, and TOSHIBA.
  • Backed with competitive intelligence and benchmarking, our research reports on the low-voltage MOSFET market are designed to provide entry support, customer profile and M&As as well as go-to-market strategy support.
  • Register for a free trial today and gain instant access to 17,000+ market research reports.

Vishay Intertechnology TrenchFET® Gen IV MOSFET Receives 2019 China IoT Innovation Award From Elecfans

Retrieved on: 
Tuesday, January 14, 2020
Technology, Vishay Intertechnology, Articles, Inventions, Internet of things, VSH, Power MOSFET

MALVERN, Pa., Jan. 14, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the Vishay Siliconix SiR626DP 60 V TrenchFET Gen IV n-channel power MOSFET has been recognized by Elecfans with a 2019 China IoT Innovation Award in the Power Supply / Charging / Energy Collection category.

Key Points: 
  • MALVERN, Pa., Jan. 14, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the Vishay Siliconix SiR626DP 60 V TrenchFET Gen IV n-channel power MOSFET has been recognized by Elecfans with a 2019 China IoT Innovation Award in the Power Supply / Charging / Energy Collection category.
  • Now in its fourth year, the China IoT Innovation Awards recognize products and technologies introduced over the past year that have delivered a far-reaching impact on the IoT industry.
  • This year Vishays SiR626DP MOSFET was recognized for giving designers a simple way to upgrade the efficiency of their power conversion applications.
  • Award winners were announced at an awards ceremony on Dec. 12 in Shenzhen following the sixth annual China IoT Conference, hosted by the Electronic Enthusiast Network.

Alpha and Omega Semiconductor Introduces 18V 2A, and 3A EZBuck™ in Thermally Enhanced Ultra-Thin TSOT23-6 Package

Retrieved on: 
Wednesday, November 6, 2019
Technology, Hardware, Semiconductor, Transistors, Semiconductor devices, Electrical components, Power electronics, Power semiconductor device, Insulated-gate bipolar transistor, Gallium nitride, Field-effect transistor, Silicon carbide, Power MOSFET

The unit price is $0.42 for the AOZ6682CI and $0.52 for the AOZ6683CI in 1000 pc quantities.

Key Points: 
  • The unit price is $0.42 for the AOZ6682CI and $0.52 for the AOZ6683CI in 1000 pc quantities.
  • Alpha and Omega Semiconductor Limited, or AOS , is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET , IGBT , IPM , TVS , HVIC , GaN/SiC , Power IC and Digital Power products.
  • AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions.
  • Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements.

Alpha and Omega Semiconductor Announces New Director Nominee

Retrieved on: 
Thursday, May 9, 2019
Technology, Hardware, Semiconductor, Semiconductor devices, Power electronics, Electrical components, Semiconductors, Power semiconductor device, Insulated-gate bipolar transistor, Power MOSFET

Alpha and Omega Semiconductor Limited (AOS or the Company) (NASDAQ: AOSL), today announced that its Board of Directors intends to nominate Claudia Chen as a director to be elected at its 2019 Annual General Meeting of Shareholders in November 2019 (the AGM).

Key Points: 
  • Alpha and Omega Semiconductor Limited (AOS or the Company) (NASDAQ: AOSL), today announced that its Board of Directors intends to nominate Claudia Chen as a director to be elected at its 2019 Annual General Meeting of Shareholders in November 2019 (the AGM).
  • We also want to thank Bob Chen for his six years of outstanding service at AOS.
  • Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio of Power MOSFET, IGBT, IPM, Power IC products and Digital Power.
  • These forward looking statements include, without limitation, statements regarding the new director nominee and annual meeting of shareholders.

Alpha and Omega Semiconductor to Announce Fiscal Third Quarter 2019 Financial Results

Retrieved on: 
Tuesday, April 16, 2019
Technology, Electronic design automation, Hardware, Software, Semiconductor, Semiconductor devices, Electrical components, Power electronics, Semiconductors, Insulated-gate bipolar transistor, Power semiconductor device, Power MOSFET

Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq:AOSL) today announces that the company will release its financial results for the fiscal 2019 third quarter ended March 31, 2019 on Thursday, May 2, 2019, after the market closes.

Key Points: 
  • Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq:AOSL) today announces that the company will release its financial results for the fiscal 2019 third quarter ended March 31, 2019 on Thursday, May 2, 2019, after the market closes.
  • The press release will be followed by a conference call and live webcast at 2:00 p.m. PT / 5:00 p.m.
  • During the conference call, the company will review the financial results and discuss other business matters.
  • Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio ofPower MOSFET, IGBT, IPMandPower ICproducts.

Alpha and Omega Semiconductor to Announce Fiscal Second Quarter 2019 Financial Results

Retrieved on: 
Thursday, January 17, 2019
Technology, Electronic design automation, Hardware, Semiconductor, Power electronics, Electronic engineering, Electronics, Electromagnetism, Insulated-gate bipolar transistor, Power semiconductor device, Power MOSFET

Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq:AOSL) today announces that the company will release its financial results for the fiscal 2019 second quarter ended December 31, 2018 on Wednesday, February 6, 2019, after the market closes.

Key Points: 
  • Alpha and Omega Semiconductor Limited ("AOS") (Nasdaq:AOSL) today announces that the company will release its financial results for the fiscal 2019 second quarter ended December 31, 2018 on Wednesday, February 6, 2019, after the market closes.
  • The press release will be followed by a conference call and live webcast at 2:00 p.m. PT / 5:00 p.m.
  • During the conference call, the company will review the financial results and discuss other business matters.
  • Alpha and Omega Semiconductor Limited, or AOS, is a designer, developer and global supplier of a broad range of power semiconductors, including a wide portfolio ofPower MOSFET, IGBT, IPMandPower ICproducts.

MagnaChip Introduces High-Voltage Super Junction MOSFET

Retrieved on: 
Monday, October 15, 2018
Electrical engineering, Electronic engineering, Electromagnetism, Power electronics, Field-effect transistor, MOSFETs, Semiconductor devices, Power MOSFET, Power semiconductor device

SEOUL, South Korea and SAN JOSE, Calif., Oct. 15, 2018 /PRNewswire/ -- MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX), a designer and manufacturer of analog and mixed-signal semiconductor platform solutions, today announced the introduction of a new High-Voltage Super Junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) (""90R1K4P").

Key Points: 
  • SEOUL, South Korea and SAN JOSE, Calif., Oct. 15, 2018 /PRNewswire/ -- MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX), a designer and manufacturer of analog and mixed-signal semiconductor platform solutions, today announced the introduction of a new High-Voltage Super Junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) (""90R1K4P").
  • Moreover, to ensure 90R1K4P product can be adopted for applications where space is at a premium, the company also can mount the Super Junction MOSFET into the slim SMD (Surface-Mount Devices) package type, D-PAK.
  • "MagnaChip's High-Voltage Super Junction MOSFET with a high breakdown voltage and a low total gate charge (Qg) will provide customers with high system reliability and energy efficiency," said YJ Kim, CEO of MagnaChip.
  • "We will continue to develop products based on the newly launched High-Voltage Super Junction MOSFET and extend our product portfolio with a diverse line of Super Junction MOSFETs with improved performance."

Silicon Carbide (SiC) MOSFET Complete Teardown Report 2018

Retrieved on: 
Tuesday, June 19, 2018
Chemistry, Matter, Ceramic materials, Electronic engineering, MOSFET, Silicon carbide, Field-effect transistor, Product teardown, Power semiconductor device, Power MOSFET

The "Silicon Carbide (SiC) MOSFET Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • The "Silicon Carbide (SiC) MOSFET Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering.
  • Littelfuse, Inc., a leader in circuit protection, recently introduced its first series of silicon carbide (SiC) MOSFETs.
  • Supported by a full component and package teardown, this report reveals Littelfuse's innovative assets, which bring several advantages to the 1200V SiC MOSFET: most notably, superior gate-oxide reliability, switching performance, and conduction losses.
  • This report also details the complete bill of materials (BoM), die manufacturing, and packaging processes.