ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices
Retrieved on:
Wednesday, November 8, 2023
Internet of things, ROHM, Department of Electrical Engineering and Information Technology of TU Darmstadt, Rohm, APEX, National Chiao Tung University, NCU, National Taipei University of Technology, BS, DC-DC, JJAP, AC-DC, Research, WLCSP, National Taipei University, Gallium nitride, Pulse, MS, University, Chang Gung University, Japanese Journal of Applied Physics, National Central University, Electricity, Miniaturization, Applied Physics Express, Silicon, Electric motor, Electronics, Lidar
This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance.
Key Points:
- This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance.
- As these applications require the use of high-speed switching devices, in conjunction with the release of GaN devices, ROHM developed an ultra-high-speed gate driver IC that maximizes GaN performance.
- As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into this driver.
- On the other hand, to demonstrate the performance of GaN devices, gate driver IC that enable high-speed switching while taking into account the low drive voltage of GaN HEMTs are essential.