Micron Commences Volume Production of 1z Nanometer DRAM Process Node
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Thursday, August 15, 2019
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BOISE, Idaho, Aug. 15, 2019 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced advancements in DRAM scaling, making Micron the first memory company to begin mass production of 16Gb DDR4 products using 1z nm process technology.
Key Points:
- BOISE, Idaho, Aug. 15, 2019 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced advancements in DRAM scaling, making Micron the first memory company to begin mass production of 16Gb DDR4 products using 1z nm process technology.
- Development and mass production of the industrys smallest feature size DRAM node are a testament to Microns world-class engineering and manufacturing capabilities, especially at a time when DRAM scaling is becoming extremely complex, said Scott DeBoer, executive vice president of Technology Development for Micron Technology.
- It also reinforces Microns continued progress in delivering improvements in relative performance and power consumption for compute DRAM (DDR4), mobile DRAM (LPDDR4) and graphics DRAM (GDDR6) product lines.
- Micron initiated the transition to 1z nm with mass production of its 16Gb DDR4 memory solution.