MOSFET Gate Driver

Aehr Test Systems CEO to Present at the EU Power Semiconductor Executive Summit in Munich, Germany on September 19, 2022

Retrieved on: 
Wednesday, September 14, 2022
KGD, CO2, Carbon, Electronics, Memory, AEHR, Wafer-level packaging, FOX, EU, Automotive industry, Automation, Technology, ABTS, Aligner, Carrier, Logic, Silicon carbide, NASDAQ, Silicon, GLOBE, MOSFET Gate Driver, IOT, Mobility, Renewable energy, Printed circuit board

FREMONT, Calif., Sept. 14, 2022 (GLOBE NEWSWIRE) -- Aehr Test Systems (NASDAQ: AEHR), a worldwide supplier of semiconductor production test and reliability qualification equipment, today announcedthat President and CEO Gayn Erickson will be a speaker at the EU Power Semiconductor Executive Summit (EU PSES) taking place September 19-20, 2022 at the Hilton Munich Park in Munich, Germany.

Key Points: 
  • FREMONT, Calif., Sept. 14, 2022 (GLOBE NEWSWIRE) -- Aehr Test Systems (NASDAQ: AEHR), a worldwide supplier of semiconductor production test and reliability qualification equipment, today announcedthat President and CEO Gayn Erickson will be a speaker at the EU Power Semiconductor Executive Summit (EU PSES) taking place September 19-20, 2022 at the Hilton Munich Park in Munich, Germany.
  • The EU Power Semiconductor Executive Summit brings together power semiconductor professionals from around the globe, providing opportunities to learn from and engage with industry leaders.
  • Headquartered in Fremont, California, Aehr Test Systems is a worldwide provider of test systems for burning-in semiconductor devices in wafer level, singulated die, and package part form, and has installed over 2,500 systems worldwide.
  • For more information, please visit Aehr Test Systems website at www.aehr.com .

New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency, Improves Safety

Retrieved on: 
Tuesday, February 26, 2019
Technology, Consumer electronics, Hardware, Semiconductor, Electronic engineering, Semiconductor devices, Electronics, Power electronics, Inverters, Power inverter, Digital electronics, Integrated circuits, MOSFET Gate Driver, Gate driver, Field-effect transistor, CMOS

View the full release here: https://www.businesswire.com/news/home/20190226005287/en/

Key Points: 
  • View the full release here: https://www.businesswire.com/news/home/20190226005287/en/
    New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency, Improves Safety (Photo: Business Wire)
    The SIC1182K offers up to 8 A output at a junction temperature of 125C allowing these devices to support SiC-MOSFET inverter designs up to several hundred kilowatts without a booster stage.
  • SCALE-iDriver SIC1182K SiC gate drivers feature Power Integrations high-speed FluxLink communications technology, dramatically improving isolation capability.
  • Power Integrations SCALE-iDriver SIC1182K SiC gate drivers meet IEC60664-1 isolation coordination for low-voltage equipment below 1000 V and IEC61800-5-1 electric motor drive inverter regulations.
  • For more information please visit www.power.com .Power Integrations, SCALE, SCALE-iDriver and the Power Integrations logo are trademarks or registered trademarks of Power Integrations, Inc. All other trademarks are the property of their respective owner.