ROHM’s Fourth Generation SiC MOSFETs to be Used in Hitachi Astemo’s Inverters for Electric Vehicles
Santa Clara, CA and Kyoto, Japan, Jan. 10, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its new fourth generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd. , a leading Japanese automotive parts manufacturer.
- Santa Clara, CA and Kyoto, Japan, Jan. 10, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its new fourth generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd. , a leading Japanese automotive parts manufacturer.
- As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently underway.
- As the first supplier in the world to begin mass production of SiC MOSFETs in 2010, ROHM continues to develop market-leading SiC power device technologies.
- However, this marks the first time SiC devices will be adopted for the main inverter circuit to further improve performance.