TANAKA Establishes New Ruthenium Film Deposition Process that Contributes toward Miniaturization and Improved Durability of Semiconductors
This process is a two-stage atomic layer deposition (ALD) process that uses hydrogen film formation to create a thin anti-oxidation film and oxygen for the deposition of a high-quality ruthenium film.
- This process is a two-stage atomic layer deposition (ALD) process that uses hydrogen film formation to create a thin anti-oxidation film and oxygen for the deposition of a high-quality ruthenium film.
- The development and evaluation of the film deposition process were jointly conducted by Professor Kim and TANAKA Kikinzoku Kogyo.
- So far, single-stage film deposition using oxygen has been the mainstream process for film deposition.
- This two-stage film deposition process reduces the risk of surface oxidation of the base caused by hydrogen film deposition and allows high-purity film deposition that maintains ruthenium purity at almost 100% using oxygen film deposition.