Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density
Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET.
- Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET.
- This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers.
- This MOSFET has a low RDS(ON) (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency.
- The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.