SBDS

ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

Retrieved on: 
Thursday, February 15, 2024
Bias, DC-DC, Risk, Miniaturization, YQ, VF, SBD, SBDS, ROHM, Rohm

SBDs with a trench MOS structure provide lower VF than planar types and enable higher efficiency in rectification applications.

Key Points: 
  • SBDs with a trench MOS structure provide lower VF than planar types and enable higher efficiency in rectification applications.
  • One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies, resulting in higher power loss when used for switching.
  • Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure.
  • The trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration.

CETY with RPG Energy Group to Implement Advanced Waste Heat to Power Generation Solution at Stanley Black & Decker Facility in Tennessee

Retrieved on: 
Thursday, October 12, 2023
SBDS, Plant, Stanley Black & Decker, Stanley Black, CO2, Waste heat, Electricity, Atmosphere, RPG, Renewable energy, Varsity Theatre (Martin, Tennessee), Decker

COSTA MESA, CA., Oct. 12, 2023 (GLOBE NEWSWIRE) -- Clean Energy Technologies, Inc. (NASDAQ: CETY) (the “Company”), a clean energy manufacturing and services company, offering eco-friendly green energy solutions, clean energy fuels, and alternative electric power for small and mid-sized projects in North America, Europe, and Asia today announced that it has finalized an agreement with RPG Energy Group Inc. (“RPG”) and Stanley Black & Decker (“SBD”) to design, build, and install a Clean Cycle waste heat recovery system at SBD’s Martin Tennessee facility.

Key Points: 
  • CETY will install a Heat Recovery Waste Heat Generator at SBDs facility in Martin Tennessee to convert its wasted heat to clean electricity.
  • One of these efforts is the introduction of an advanced waste heat generation solution at its manufacturing facility in Martin, TN.
  • RPG Energy Group Inc., a leading energy efficiency and renewable energy integrator, supports works with Stanley Black and Decker to develop and integrate various energy projects in pursuit of the company’s sustainability and operating goals.
  • This joint venture with RPG Energy & Stanley Black & Decker will significantly enhance the scalability of our heat recovery solutions.

Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

Retrieved on: 
Thursday, July 13, 2023
EV, Electric Vehicles, Hardware, Utilities, Alternative Energy, Alternative Vehicles, Fuels, Energy, Technology, Automotive, Semiconductor, Other Manufacturing, Automotive Manufacturing, Manufacturing, SBDS, Silicon carbide, Typ, Electronics, Multimedia, JBS, Rare-earth element, Schottky, Toshiba

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment.

Key Points: 
  • Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment.
  • Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.
  • View the full release here: https://www.businesswire.com/news/home/20230712192748/en/
    Toshiba: TRSxxx65H series, 3rd generation 650V SiC Schottky barrier diodes.
  • (Graphic: Business Wire)
    The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products.

Bare Die SiC from ROHM Chosen by Apex Microtechnology for Newest Line of Power Modules

Retrieved on: 
Monday, March 20, 2023
Ellington Electronics Technology Group, ROHM, Microtechnology, SA111, SBDS, Orbit, Electronics, HEICO, Apex, Silicon carbide, SBD, BLDC, MOSFET, Silicon

Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky Barrier Diode (SBD) for a new line of power modules.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky Barrier Diode (SBD) for a new line of power modules.
  • ROHM’s 1200V S4101 SiC MOSFETs and 650V S6203 SiC SBD are supplied in bare die form, enabling Apex to save space and increase the performance and reliability of its modules.
  • In addition to the SiC devices, Apex’s new line of power modules use ROHM’s tightly-matched BM60212FV-C gate drivers in bare die format, contributing to high-efficiency operation of high-voltage motors and power supplies.
  • By using these parts in bare die form, Apex has been able to increase the levels of integration offered by these power modules.

ROHM’s SiC SBDs Chosen by Murata Power Solutions for Data Center PSUs

Retrieved on: 
Tuesday, March 7, 2023
AC-DC, SBDS, Temperature, Silicon carbide, PSU Zephyrus, Murata, Power supply unit (computer), ROHM, Electronics, Rohm

Santa Clara, CA and Kyoto, Japan, March 07, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that Murata Power Solutions is using its high performance silicon carbide (SiC) Schottky Barrier Diodes (SBDs) to increase performance and reduce the size of Power Supply Units (PSUs) for data center applications.

Key Points: 
  • Santa Clara, CA and Kyoto, Japan, March 07, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that Murata Power Solutions is using its high performance silicon carbide (SiC) Schottky Barrier Diodes (SBDs) to increase performance and reduce the size of Power Supply Units (PSUs) for data center applications.
  • “By moving to SiC devices, we are able to develop power supplies with higher efficiency and higher power density.
  • Murata is also using ROHM’s SiC MOSFETs in three-phase inverter development projects, and the performance of those SiC MOSFETs are satisfying.”
    “We are excited to help Murata Power Solutions, a Murata Manufacturing Group company that leads the industry in the field of industrial equipment including power supply systems.
  • ROHM’s latest third generation of SiC SBDs, which have been adopted by Murata Power Solutions, offers greater surge current capability while further reducing the industry’s smallest forward voltage of its second generation SBDs.

Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability

Retrieved on: 
Friday, December 9, 2022
Semiconductor, Consumer Electronics, Technology, Manufacturing, Other Manufacturing, Hardware, HDD, Rona, Learning, US, Electronics, Research, SBDS, International Electron Devices Meeting, Silicon, Silicon carbide, Miniaturization, Multimedia, Schematic, MOSFET, Carbon, Electronic component, Computer data storage, Toshiba, SBD

Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively Toshiba) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability.

Key Points: 
  • Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively Toshiba) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability.
  • Toshiba has confirmed that the design secures an approximately 20% reduction in on-resistance[1] (RonA) against its current SiC MOSFET, with no loss of reliability.
  • SiC is widely seen as the next generation material for the devices, as it delivers higher voltages and lower losses than silicon.
  • Toshiba has improved both conduction loss in its SBD-embedded SiC MOSFET, and achieved good diode conductivity, by deploying a check-pattern SBD distribution.

Global Compound Semiconductor Market Report 2022: Growing Demand for SiC Devices in Power Electronics Boosts Sector

Retrieved on: 
Friday, December 2, 2022
Telecommunication, Silicon carbide, LED, Power electronics, JFET, Electron, MOSFET, RF, III, Gallium arsenide, Silicon-germanium, Lighting, Indium phosphide, Growth, Electronics, SBDS, Element, Region, Gallium nitride, Silicon, USD, Mobile phone, Electronic component, Automotive industry

DUBLIN, Dec. 2, 2022 /PRNewswire/ -- The "Global Compound Semiconductor Market by Type (GaN, GaAs, SiC, InP), Product (LED, Optoelectronics, RF Devices, Power Electronics), Application (Telecommunication, General Lighting, Automotive, Consumer Devices, Power Supply) & Region - Forecast to 2027" report has been added to ResearchAndMarkets.com's offering.

Key Points: 
  • DUBLIN, Dec. 2, 2022 /PRNewswire/ -- The "Global Compound Semiconductor Market by Type (GaN, GaAs, SiC, InP), Product (LED, Optoelectronics, RF Devices, Power Electronics), Application (Telecommunication, General Lighting, Automotive, Consumer Devices, Power Supply) & Region - Forecast to 2027" report has been added to ResearchAndMarkets.com's offering.
  • A compound semiconductor is a semiconductor made from two or more elements from two or more different periodic table groups.
  • Telecommunications: The largest segment of the compound semiconductor market, by application
    Telecommunication is a leading application segment of the compound semiconductor market owing to the increased use of compound semiconductors such as GaAs, GaN, InP, and SiGe.
  • The study includes an in-depth competitive analysis of these key players in the compound semiconductor market, with their company profiles, recent developments, and key market strategies.

Global Compound Semiconductor Market Report 2022: Potential Use of GaN in 5G Infrastructure Development Presents Opportunities - ResearchAndMarkets.com

Retrieved on: 
Monday, November 28, 2022
Technology, Semiconductor, Telecommunications, Region, Growth, Silicon-germanium, Indium phosphide, III, Electron, JFET, USD, Power electronics, Lighting, Gallium arsenide, Silicon, LED, Silicon carbide, Telecommunication, MOSFET, Element, RF, SBDS, Gallium nitride, Electronics, Mobile phone, Electronic component, Automotive industry

The market has promising growth potential due to several factors, such as the rise in demand and implementation of GaN and SiC in the semiconductor industry.

Key Points: 
  • The market has promising growth potential due to several factors, such as the rise in demand and implementation of GaN and SiC in the semiconductor industry.
  • A compound semiconductor is a semiconductor made from two or more elements from two or more different periodic table groups.
  • Telecommunications: The largest segment of the compound semiconductor market, by application
    Telecommunication is a leading application segment of the compound semiconductor market owing to the increased use of compound semiconductors such as GaAs, GaN, InP, and SiGe.
  • The study includes an in-depth competitive analysis of these key players in the compound semiconductor market, with their company profiles, recent developments, and key market strategies.

Zurich Airport deploys self bag drop installation with German supplier Materna IPS

Retrieved on: 
Tuesday, June 14, 2022
Time, SBD, Lufthansa, SWISS, Airport, Solution, Maintenance, Communication, Technology, Movement, SBDS, Zurich Airport, Person, Baggage, Airline, Austrian Airlines, Leontopodium nivale, ZRH

DORTMUND, Germany, June 14, 2022 /PRNewswire/ --

Key Points: 
  • As the largest airport in Switzerland, Zurich Airport (ZRH) is an important gateway in and outside the country.
  • The first self bag drops (SBD) are located in check-in area 2, the other half went into operation in check-in area 3.
  • Materna IPS systems are able to decrease the average passenger transaction time and therefore significantly reduce waiting times during check-in.
  • This increases flexibility in the check-in process and enhances passenger convenience by providing additional bag drop points," says Roman Jung, Project Manager Self Bag Drop, Flughafen Zrich AG
    With implementing this major project at Zurich Airport, Materna IPS extends its business activities in the European market and is expanding its international growth.

Zurich Airport deploys self bag drop installation with German supplier Materna IPS

Retrieved on: 
Tuesday, June 14, 2022
Time, SBD, Lufthansa, SWISS, Airport, Solution, Maintenance, Communication, Technology, Movement, SBDS, Zurich Airport, Person, Baggage, Airline, Austrian Airlines, Leontopodium nivale, ZRH

DORTMUND, Germany, June 14, 2022 /PRNewswire/ --

Key Points: 
  • As the largest airport in Switzerland, Zurich Airport (ZRH) is an important gateway in and outside the country.
  • The first self bag drops (SBD) are located in check-in area 2, the other half went into operation in check-in area 3.
  • Materna IPS systems are able to decrease the average passenger transaction time and therefore significantly reduce waiting times during check-in.
  • This increases flexibility in the check-in process and enhances passenger convenience by providing additional bag drop points," says Roman Jung, Project Manager Self Bag Drop, Flughafen Zrich AG
    With implementing this major project at Zurich Airport, Materna IPS extends its business activities in the European market and is expanding its international growth.