Dynamic random-access memory

Unisantis Unveils Dynamic Flash Memory as DRAM Alternative

Retrieved on: 
Monday, May 24, 2021
Technology, Nanotechnology, Networks, Semiconductor, Computer memory, Computing, Technology, Science and technology, Dynamic random-access memory, Random-access memory, Flash memory, Volatile memory, Dram

Ltd., today unveiled the companys developments in Dynamic Flash Memory (DFM) technology, a leap forward in the industrys search for alternatives to DRAM for future low-cost high-density embedded or standalone memory applications.

Key Points: 
  • Ltd., today unveiled the companys developments in Dynamic Flash Memory (DFM) technology, a leap forward in the industrys search for alternatives to DRAM for future low-cost high-density embedded or standalone memory applications.
  • DFM is able to offer faster speeds and higher density when compared to DRAM or other types of volatile memory.
  • Koji Sakui and Nozomu Harada from Unisantis, in a paper entitled Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT).
  • We are delighted to present Dynamic Flash Memory with its significant advantages over the current DRAM architecture, added James Ashforth-Pook, Senior Vice-President of Unisantis Electronics.

Peter Lee of Micron Tapped for Si2 Pinnacle Award

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Tuesday, May 11, 2021
Software, Mobile, Wireless, Networks, Internet, Hardware, Electronic design automation, Data management, Technology, Semiconductor, Nanotechnology, Other Technology, Telecommunications, Silicon Integration Initiative, Si2, Micron Technology, Dynamic random-access memory, Technology, Computing, Science and technology

b'Peter Lee, director of a global team responsible for the DRAM design environment at Micron Technology, will receive the quarterly Silicon Integration Initiative Pinnacle Award.

Key Points: 
  • b'Peter Lee, director of a global team responsible for the DRAM design environment at Micron Technology, will receive the quarterly Silicon Integration Initiative Pinnacle Award.
  • This award recognizes volunteers for their exceptional contributions to Si2\xe2\x80\x99s success as a leading semiconductor R&D joint venture.\nThis press release features multimedia.
  • View the full release here: https://www.businesswire.com/news/home/20210511005032/en/\nPeter Lee, director of a global team responsible for the DRAM design environment at Micron Technology, will receive the quarterly Silicon Integration Initiative Pinnacle Award.
  • This award recognizes volunteers for their exceptional contributions to Si2\xe2\x80\x99s success as a leading semiconductor R&D joint venture.

Applied Materials Introduces Materials Engineering Solutions for DRAM Scaling

Retrieved on: 
Wednesday, May 5, 2021
Computer memory, Technology, Computing, Science and technology, Dynamic random-access memory, Interconnect, Random-access memory, Integrated circuit

The industry urgently needs breakthroughs that can allow DRAM to scale to reduce area and cost while also operating at higher speeds and using less power.\nApplied Materials is working with DRAM customers to commercialize three materials engineering solutions that create new ways to shrink as well as improve performance and power.

Key Points: 
  • The industry urgently needs breakthroughs that can allow DRAM to scale to reduce area and cost while also operating at higher speeds and using less power.\nApplied Materials is working with DRAM customers to commercialize three materials engineering solutions that create new ways to shrink as well as improve performance and power.
  • The solutions target three areas of DRAM chips: storage capacitors, interconnect wiring and logic transistors.
  • With DRAM designs now experiencing similar scaling challenges, Applied is adapting Black Diamond to the DRAM market and making it available on the highly productive Producer\xc2\xae GT platform.
  • In DRAM as in logic, HKMG will increasingly replace polysilicon transistors over time.\nThis technology inflection in DRAM creates growth opportunities for Applied Materials.

The Worldwide MRAM Industry is Expected to Reach $4.9 Billion by 2026

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Thursday, April 29, 2021
Non-volatile memory, Computer memory, Computer storage devices, Computer data storage, Emerging technologies, Spintronics, Magnetoresistive RAM, Random-access memory, Dynamic random-access memory, Everspin Technologies, Crocus Technology

Major companies, scientific, and research & development institutions, have been developing MRAM technologies, in the past few years.

Key Points: 
  • Major companies, scientific, and research & development institutions, have been developing MRAM technologies, in the past few years.
  • MRAM is considered a niche memory storage memory in the market, because of the availability of alternatives such as DRAM.
  • China and India had a military expenditure of US$261 billion and US$71.1 billion, in the same years.
  • Major companies have been providing novel and advanced MRAM solutions, for the aerospace and aviation industry, in the past few years.

Global MRAM Market (2021 to 2026) - Featuring Intel, Honeywell International and Crocus Nano Electronics Among Others - ResearchAndMarkets.com

Retrieved on: 
Tuesday, April 27, 2021
Technology, Hardware, Computer memory, Non-volatile memory, Emerging technologies, Computer storage devices, Technology, Spintronics, Computer architecture, Magnetoresistive RAM, Random-access memory, Computer data storage, Dynamic random-access memory, Everspin Technologies

Major companies, scientific, and research & development institutions, have been developing MRAM technologies, in the past few years.

Key Points: 
  • Major companies, scientific, and research & development institutions, have been developing MRAM technologies, in the past few years.
  • For Instance, In April 2020, a team at the Indian Institute of Technology, in Mandi, India, announced the development of Magnetic Random-Access Memory, intending to address data storage concerns.
  • The company stated that the novel funds would be used to deploy SOT-MRAM in every chip, becoming a major candidate for the next generation memory storage market.
  • MRAM is considered a niche memory storage memory in the market, because of the availability of alternatives such as DRAM.

MemVerge Makes Big Memory Apps Sizzle

Retrieved on: 
Tuesday, April 6, 2021
Computer memory, Computing, Technology, Computer data, Intel, Dynamic random-access memory, Random-access memory, Big memory, Read-only memory, 3D XPoint

The company also announced its membership in the CXL Consortium, and five Big Memory Labs at Arrow, Intel, MemVerge, Penguin Computing, and WWT that are now equipped and available for Big Memory demonstrations, proof-of-concept testing, and software integration.

Key Points: 
  • The company also announced its membership in the CXL Consortium, and five Big Memory Labs at Arrow, Intel, MemVerge, Penguin Computing, and WWT that are now equipped and available for Big Memory demonstrations, proof-of-concept testing, and software integration.
  • Pioneered by MemVerge, Big Memory software uniquely makes 100% use of available memory capacity while providing new operational capabilities to memory-centric workloads such as virtualized cloud infrastructure , in-memory databases , genomics , and animation/VFX .
  • Big Memory makes use of Intel Optane persistent memory and MemVerge Memory Machine software.
  • Memory Machine software from MemVerge makes this possible by virtualizing DRAM and persistent memory to form a platform for enterprise-class in-memory data services.

Samsung Develops Industry’s First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications

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Thursday, March 25, 2021
Technology, Hardware, Semiconductor, Data management, Technology, Computer memory, Industry economics), Computing, SDRAM, Digital electronics, DDR5 SDRAM, MOSFETs, Samsung Electronics, Dynamic random-access memory, Samsung, Random-access memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry's first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.

Key Points: 
  • Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry's first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.
  • View the full release here: https://www.businesswire.com/news/home/20210325005400/en/
    Samsung Develops Industrys First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications (Graphic: Business Wire)
    Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development, said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics.
  • Samsungs DDR5 will utilize highly advanced HKMG technology that has been traditionally used in logic semiconductors.
  • By expanding its use in DDR5, Samsung is further solidifying its leadership in next-generation DRAM technology.

Samsung Develops Industry’s First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications

Retrieved on: 
Thursday, March 25, 2021
Data management, Semiconductor, Consumer electronics, Technology, Software, Networks, Hardware, Companies, Technology, Computing, Computer memory, SDRAM, DDR5 SDRAM, Digital electronics, Samsung, Dynamic random-access memory, Random-access memory, Intel

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry's first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.

Key Points: 
  • Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry's first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.
  • Samsungs DDR5 will utilize highly advanced HKMG technology that has been traditionally used in logic semiconductors.
  • By expanding its use in DDR5, Samsung is further solidifying its leadership in next-generation DRAM technology.
  • Specific Intel platforms may not support all available Samsung DDR5 features.

Nanya Technology Corporation Boosts Manufacturing Productivity With HPE Ezmeral Container Platform

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Monday, March 15, 2021
Networks, Hardware, Data management, Technology, Software, Computer memory, Dynamic random-access memory, HPE, Inventions

Nanya Technology Corporation (Nanya) the worlds fourth-largest manufacturer of dynamic random access memory (DRAM), has selected the HPE Ezmeral Container Platform to promote the continuous improvement of production yield, quality and cost by significantly accelerating the rollout of artificial intelligence (AI) projects in its fabs.

Key Points: 
  • Nanya Technology Corporation (Nanya) the worlds fourth-largest manufacturer of dynamic random access memory (DRAM), has selected the HPE Ezmeral Container Platform to promote the continuous improvement of production yield, quality and cost by significantly accelerating the rollout of artificial intelligence (AI) projects in its fabs.
  • In order to centralize and simplify processes to help data science teams accelerate their projects, Nanya selected the HPE Ezmeral Container Platform.
  • We are excited to help Nanya Technology Corporation advance its continuous-improvement approach by accelerating the application of AI in its DRAM production.
  • Moreover, the HPE Ezmeral Container Platform includes an app store for common AI and analytics tools and frameworks.

Magnachip Unveils LDO Linear Regulator Featuring Ultra-Fast Transient Response for UFS-Based Multi-Chip Packages

Retrieved on: 
Monday, March 15, 2021
Computer memory, Computer data storage, Non-volatile memory, Voltage regulation, Computer data, Computing, Universal Flash Storage, LDO, Flash memory, Linear regulator, Multi-chip module, Dynamic random-access memory

SEOUL, South Korea, March 15, 2021 /PRNewswire/ --Magnachip Semiconductor Corporation ("Magnachip") (NYSE: MX) announced today that the company has released a new Low-dropout (LDO) linear regulator featuring an ultra-fast transient responsefor a Universal Flash Storage (UFS)-based Multi-Chip Package (MCP).

Key Points: 
  • SEOUL, South Korea, March 15, 2021 /PRNewswire/ --Magnachip Semiconductor Corporation ("Magnachip") (NYSE: MX) announced today that the company has released a new Low-dropout (LDO) linear regulator featuring an ultra-fast transient responsefor a Universal Flash Storage (UFS)-based Multi-Chip Package (MCP).
  • UFS-based MCP is a memory module that integrates UFS controller and memory ICs, such as DRAM or NAND flash.
  • Magnachip's LDO linear regulator is designed for the power supply of NAND flash in UFS-based MCP with an input voltage of up to 500mA.
  • In addition, the dropout voltage is as low as 0.3V, which makes the linear regulator perfect for low-power domain operations of batteries.